Vishay Introduces New Generation of Silicon Carbide Schottky Diodes

In a significant advancement for power design technology, Vishay Intertechnology, Inc. (VSH), a prominent player in the manufacturing and supplying of discrete semiconductors and passive electronic components, has unveiled its latest series of silicon carbide (SiC) Schottky diodes. This development heralds an era of heightened efficiency and dependability in switching power applications. The announcement of 16 new Gen 3 1200 V SiC Schottky diodes emphasizes Vishay's commitment to meeting the evolving demands of the power electronics sector.

Enhancing Power Systems with SiC Technology

Silicon carbide technology is widely recognized for its superior characteristics compared to traditional silicon in terms of handling higher voltages and thermal conductivities. Vishay's addition of Gen 3 SiC diodes to their product portfolio promises to deliver improved performance to power systems, enabling designers to achieve systems that are not only more efficient but also more reliable over time. These diodes are well-suited for a broad range of applications, including electric vehicles, solar power inverters, and industrial power supplies.

Vishay's Continuous Innovation

Vishay, headquartered in Malvern, Pennsylvania, continues to be at the forefront of innovation in the semiconductor and electronic component industry. The latest release of the Gen 3 1200 V SiC Schottky diodes allows Vishay to maintain a competitive edge and provide their customers with products that are designed to meet stringent requirements in performance and durability. The company's ongoing research and development efforts serve as a testament to its dedication to technological advancement and customer satisfaction.

Vishay, Diodes, Semiconductors